News
Issue #2002 - 43 (November 2002)
(Updated Nov. 13, 2002)

TECHNOLOGY

IBM Unveils Super-fast Transistor (350 GHz) - Great Applications in Wireless 

IBM said last week on Monday that it has created the world's fastest silicon-based transistor. The transistor, a key component in microchips, uses a modified design and silicon germanium (SiGe) bipolar technology to achieve speeds of 350 GigaHertz, nearly 300 percent faster than today's production devices, and 65 percent faster than previously reported silicon transistors. A fingernail-sized microchip can hold millions of transistors. IBM anticipates the new transistor will lead to communications chips with speeds of more than 150 GHz in about two years. The transistor is also expected to result in substantially lower power consumption and lower cost for communications systems and other electronic products. The new transistors expand the use of SiGe technology for extending function and battery life in cell phones and other radio frequency, or wireless, communications products, IBM said. (Source: Reuters, Wall Street Journal) 

For more information: http://www.ibm.com

MobileInfo Comments and Advisory: This is a significant breakthrough that in future will help in building faster and more efficient wireless devices. 

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