The memory technology is based on the ferroelectric principle. The Ferroelectric Random Access Memory (FeRAM) combines the high-speed and endurance of the popular dynamic and static random access memories with the ability to store information in the absence of power.

The advantages of FeRAM over NOR– flash memory

• SRAM-like fast read and program response times
• Low power consumption
• An immense number of non-volatile read and write cycles

This makes the technology ideal for use in such diverse applications as game consoles, cellular phones, mobile products, and IC cards, the companies said in a joint statement.

• Plans to produce and jointly market first engineering samples, working from 8M FeRAM developed by Toshiba, by March 2001.
• Commercialization of a 32M device is expected at the end of 2002.
• Release 64M or, perhaps, 128M devices subject to market conditions.